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| AP3402GEH/J Pb Free Plating Product Advanced Power Electronics Corp. Low On-resistance Single Drive Requirement Surface Mount Package RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 18m 38A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3402GEJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 35 20 38 24 110 34.7 0.27 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units /W /W Data and specifications subject to change without notice 200420052-1/4 AP3402GEH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 22 10.5 4 6 9 78 19 4 950 160 110 2.5 Max. Units 18 32 3 1 25 30 17 1520 3.8 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=25A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=25A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=20V ID=25A VDS=25V VGS=4.5V VDS=15V ID=25A RG=3.3,VGS=10V RD=0.6 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=25A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 22 10 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 2/4 AP3402GEH/J 100 80 T C =25 C 80 o 10V 7.0V 60 T C =150 o C 10V 7.0V ID , Drain Current (A) 60 ID , Drain Current (A) 40 5.0V 40 5.0V 4.5V 4.5V 20 20 V G =3.0V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 V G =3.0V 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.5 I D =20A 50 T C =25 o C Normalized RDS(ON) 1.2 I D =25A V G =10V RDS(ON) (m) 40 30 0.9 20 10 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 20 15 1.2 T j =150 o C IS(A) 10 T j =25 o C Normalized VGS(th) (V) 1.4 0.9 5 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.3 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP3402GEH/J f=1.0MHz 14 10000 VGS , Gate to Source Voltage (V) 12 I D =25A V DS =15V V DS =20V V DS =25V 10 C (pF) 8 1000 C iss 6 4 2 C oss C rss 100 0 5 10 15 20 0 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 100us ID (A) 10 0.1 0.1 0.05 1 T C =25 o C Single Pulse 0 1ms 10ms 100ms 1s DC PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =5V 40 VG QG ID , Drain Current (A) 30 T j =25 o C T j =150 o C 4.5V QGS QGD 20 10 Charge 0 Q 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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